Summary 1.2 kV SiC Super Junction MOSFET:
We have developed the first 1.2 kV SJ MOSFET in Taiwan in 2020. Its threshold voltage is 3.5 V, saturation current is about 12 A, and the specific on resistance is 8mΩ*cm2.

3.3 kV SiC Conventional VDMOSFET:
We have developed the 3.3 kV conv. VDMOSFET in 2020. The breakdown voltage is greater than 3.3 kV while the leakage current is less than 1e-7 A. Besides, we have designed several edge termination structures with multi-zone technique and most of them could reach breakdown voltage of 4 kV.

Company Description:
Our team delicate on developing SiC power device, including diodes and transistors. Professor Kung-Yen Lee, who had lots of research experience with the professional area of SiC power device in many years, lead the team to have multiple research projects and have proposed lots of publications and patents. He led team to win the futuristic breakthrough technology award in Future Tech in 2019, the first prize of FITI in 2020, and the first prize of Taiwan Reputed University Startups project in 2021.
The team consists of IC company internship experienced students and they are equipped with the ability of TCAD, semiconductor simulation software, process design, photomask design, device measurem
Technical Film
Keyword 1.2 kV SiC Super Junction MOSFET 3.3 kV SiC Conventional VDMOSFET
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